According to micron's speech at Computex conference, one of the three factories in Taichung will upgrade EUV lithography technology later this year, so as to prepare DRAM for upgrading to 1-gamma process node 1-gamma was just a research and development node at the initial stage of launch to help the company prepare for the wider promotion of EUV technology.
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Currently, micron's DRAM is mainly based on the 1-alpha node, and the company hopes to convert the 1-beta node to mass production in its factory in Taiwan, China next year. Micron's current 1-alpha node is based on DUV technology and was launched last year. The company claims that its memory density is 40% higher than that of the previous 1z node.
Micron will no longer mention the chip size of its commonly used nano measurement method, but it is said that its 1z node is about 11 to 13 nm. Therefore, if its 1-alpha node is not less than 10 nm, the 1-beta node is likely to be less than 10 nm eventually.
Meguiar's long-term roadmap also includes the 1-delta node, which was originally its first EUV product, but now it seems that it has advanced to the 1-gamma node. Meguiar is likely to transfer its other factories to EUV at an appropriate time, but so far, compared with most other types of integrated circuits, DRAM has not benefited from node shrinkage, so we will wait and see the possible benefits of EUV.