According to insiders, Changjiang storage has recently delivered samples of its self-developed 192 layer 3D NAND flash memory to some customers, and is expected to officially launch the product before the end of this year. According to the electronic times, the above-mentioned people said that the launch of 192 layer 3D NAND flash memory chip is a milestone of Changjiang storage. The company is trying to catch up with its larger Korean and American counterparts in the technology competition.
Source: Yangtze River storage
The source said that as the yield of 128 layer 3D NAND flash memory process has improved to a satisfactory level, Changjiang storage will also expand its monthly output to 100000 wafers. The company will soon complete the construction of phase II facilities of its headquarters in Wuhan, which is expected to start later this year. By the end of 2023, the monthly output of Changjiang storage may exceed 200000 pieces, and the global market share is expected to reach 7-8%.
On the other hand, micron technology has launched the industry's first 232 layer 3D NAND flash memory, which is expected to be used in the new SSD launched in 2023. Market observers believe that Samsung Electronics is expected to join the competition of 3D NAND flash memory with more than 200 layers later in 2022. (checked by / indrich)