Samsung previously planned to become one of the world's most advanced semiconductor manufacturing companies in 2030. 3nm node is one of their trump cards. It has been plagued by negative rumors such as poor yield. Recently, Samsung finally unveiled its first 3nm wafer, which is scheduled to be mass produced in Q2 this year, earlier than TSMC.
Recently, the president of the United States visited Samsung's chip factory near pingze City, this is the only wafer factory in the world that can mass produce 3nm process. Samsung has disclosed the 12 inch wafer manufactured by 3nm process for the first time, but the specific chip is unknown**
For Samsung, 3nm node is the key for them to bet that the chip process will catch up with TSMC, because TSMC's 3nm process will not be the next generation of GAA transistor technology. Samsung's 3nm node will enable GAA technology, which is a new type of surround gate transistor. Mbcfet (multi bridge channel fet) is manufactured by using nano chip equipment, which can significantly enhance the performance of transistors, It mainly replaces FinFET transistor technology.
According to Samsung, compared with 7Nm manufacturing process, the logical area efficiency of 3nm GAA technology is improved by more than 45%, the power consumption is reduced by 50%, and the performance is improved by about 35%. In terms of paper parameters, it is better than TSMC 3nm FinFET process**
According to Samsung's previous statement, the 3nm process will be mass produced in Q2 of 2022. This progress is more radical than TSMC's 3nm process. The latter can only be trial produced on a small scale in the second half of this year and will not be mass produced on a large scale next year.